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| 7MBP 150RA-060 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=58.8% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode One Transistor Collector Power Dissi. DB Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC *1 VIN *2 IIN VALM *3 IALM *4 Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 150 300 150 595 50 100 50 198 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 Units IGBT IPM 600V 6x150A+DB n Outline Drawing Min. 0 0 200 0 V A W A W V mA V mA C V Nm Fig. 1 Note: *1: Recommendable Value; 2.5 3.0 Nm (M5) * Electrical Characteristics of Power Circuit ( at Tj=25C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=150A -IC=150A VCE=600V, Input Terminal Open IC=50A -IC=50A Min. Typ. Max. 1.0 2.8 3.0 1.0 2.8 3.3 Units mA V V mA V V DB * Electrical Characteristics of Control Circuit ( at Tj=25C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100C fSW=0~15kHz, TC=-20~100C On Off RIN=20k VDC=0V, IC=0A, Case Temp. Surface of IGBT Chip Tj=125C Tj=125C Tj=25C Min. 3 10 1.00 1.25 110 20 150 20 225 75 1.5 1425 11.0 0.2 10 2 1500 A s ms V Typ. Max. 18 65 1.70 1.95 125 C Units mA V 1.35 1.60 8.0 1575 12.5 * Dynamic Characteristics ( at TC=Tj=125C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=150A, VDC=300V IF=150A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Units s 7MBP 150RA-060 * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. Typ. 0.05 IGBT IPM 600V 6x150A+DB Max. 0.21 0.47 0.63 Units C/W n Equivalent Circuit Drivers include following functions A Short circuit protection circuit A Amplifier for driver A Undervoltage protection circuit A Overcurrent protection circuit A IGBT Chip overheating protection 7MBP 150RA-060 n Dynamic Brake Collector Current vs. Collector-Emitter Voltage 100 T j= 2 5 C 100 T j=125C IGBT IPM 600V 6x150A+DB Collector Current vs. Collector-Emitter Voltage [A] C Collector Current : I C [A] 80 V C C=17V,15V, 13V 80 V CC =17V,15V, 13V Collector Current : I 60 60 40 40 20 20 0 0 1 2 3 Collector-Emitter Voltage : V CE [V] 4 0 0 1 2 3 4 Collector-Emitter Voltage : V CE [V] Transient Thermal Resistance 0 Reverse Biased Safe Operating Area 500 450 V C C =15V, T j<1 2 5 C [C/W] 10 th(j-c) C [A] IGBT 10 -1 400 350 300 250 200 150 100 50 Thermal Resistance : R 10 -2 Collector Current : I 10 -1 10 -3 10 -2 10 0 0 0 100 200 300 400 500 600 700 Collector-Emitter Voltage : V CE [V] Pulse Width : P W [sec] Power Derating For IGBT Over Current Protection vs. Junction Temperature 200 (per device) 120 V cc= 1 5 V [W] C oc [A] 150 100 Collector Power Dissipation : P Over Current Protection Level : I 0 20 40 60 80 100 120 140 160 80 100 60 50 40 20 0 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C] Case Temperature : T C [C] 7MBP 150RA-060 n Control Circuit Power Supply Current vs. Switching Frequency 40 T j= 1 0 0 C V CC= 1 7 V 2,5 IGBT IPM 600V 6x150A+DB Input Signal Threshold Voltage vs. Power Supply Voltage T j= 2 5 C T j= 1 2 5 C 2,0 [mA] 35 N-Side 30 25 20 15 P-Side 10 5 0 0 5 10 15 V CC= 1 5 V V CC= 1 3 V Input Signal Threshold Voltage CC Power Supply Current : I : V in(on) , V in(off) [V] V in(off) 1,5 V in(on) V C C= 1 7 V V C C= 1 5 V V C C= 1 3 V 1,0 0,5 20 25 0,0 12 13 14 15 16 17 18 Switching Frequency : fsw [kHz] Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 14 12 1,0 Under Voltage Hysterisis vs. Junction Temperature [V] 0,8 [V] Under Voltage Hysterisis : V 40 60 80 100 120 140 10 8 6 4 2 0 20 UV H Under Voltage : V 0,6 0,4 0,2 0,0 20 40 60 80 100 120 140 Junction Temperature : T j [C] Junction Temperature: T j [C] Alarm Hold Time vs. Power Supply Voltage 3,0 200 Over Heating Characteristics T cOH , T jOH , T cH, T jH vs. V cc , T jOH [C] [ms] 2,5 T j= 1 0 0 C 2,0 T j= 2 5 C 1,5 , T jH [C] cH T jOH 150 ALM Over Heating Protection : T cOH Over Heating Hysterisis : T Alarm Hold Timen : t T cOH 100 1,0 50 0,5 T cH ,T jH 0 12 13 14 15 16 17 18 0,0 12 13 14 15 16 17 18 Power Supply Voltage : V cc [V] Power Supply Voltage : V cc [V] 7MBP 150RA-060 n Inverter Collector Current vs. Collector-Emitter Voltage 300 T j= 2 5 C 300 T j= 1 2 5 C IGBT IPM 600V 6x150A+DB Collector Current vs. Collector-Emitter Voltage 250 [A] C C [A] V C C=17V,15V, 13V 250 V C C =17V,15V, 13V 200 200 Collector Current : I Collector Current : I 150 150 100 100 50 50 0 0 1 2 3 4 Collector-Emitter Voltage : V CE [V] 0 0 1 2 3 4 Collector-Emitter Voltage : V CE [V] Switching Time vs. Collector Current V DC =300V, V CC =15V, T j= 2 5 C Switching Time vs. Collector Current V D C= 3 0 0 V , V C C=15V, T j= 1 2 5 C , t r, t off , t f [ns] t on 1000 t off , t r, t off , t f [ns] t off ton 1000 on Switching Time : t Switching Time : t on tf tf 100 100 0 50 100 150 200 250 0 50 100 150 200 250 Collector Current : I C [A] Collector Current : I C [A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current 300 t rr , I rr vs. I F trr = 1 2 5 C [A] rr 250 [A] T j= 1 2 5 C 2 5 C [ns] 100 t rr = 2 5 C I rr = 1 2 5 C 150 Reverse Recovery Time : t 200 Reverse Recovery Current : I Forward Current : I F rr I rr= 1 2 5 C 100 50 10 0 0 1 2 Forward Voltage : V F [V] 3 4 0 50 100 150 200 250 Forward Current : I F [A] 7MBP 150RA-060 Transient Thermal Resistance 1500 10 0 IGBT IPM 600V 6x150A+DB Reverse Biased Safe Operating Area V C C = 1 5 V , T j< 1 2 5 C 1350 1200 Thermal Resistance : Rth(j-c) [C/W] [A] Collector Current : I FWD -1 C 1050 900 750 600 450 300 150 10 IGBT 10 -2 0 -3 10 10 -2 10 -1 10 0 0 100 200 300 400 500 600 700 Pulse Width : P W [sec] Collector-Emitter Voltage : V CE [V] Power Derating For IGBT 700 (per device) 300 Power Derating For FWD (per device) [W] [W] Collector Power Dissipation : P C 600 500 250 Collector Power Dissipation : P C 200 400 300 200 100 0 0 20 40 60 80 100 120 140 160 150 100 50 0 0 20 40 60 80 100 120 140 160 C a s e T e m p e r a t u r e : T C (C) C a s e T e m p e r a t u r e : T C (C) Switching Loss vs. Collector Current 15 V DC =300V, V CC =15V, T j= 2 5 C 30 Switching Loss vs. Collector Current V DC =300V, V CC =15V, T j = 1 2 5 C E on 25 , E off , E rr [mJ/cycle] E on 10 E off , E off , E rr [mJ/cycle] 20 E off 15 on Switching Loss : E 5 Switching Loss : E on 10 5 E rr 0 50 100 150 200 250 0 0 50 100 150 200 Collector Current : I C [A] E rr 250 0 7MBP 150RA-060 Over Current Protection vs. Junction Temperature 420 360 V cc = 1 5 V IGBT IPM 600V 6x150A+DB Over Current Protection Level : I oc [A] 300 240 180 120 60 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [C] 7MBP 150RA-060 n Outline Drawing IGBT IPM 600V 6x150A+DB Weight: 440g Specification is subject to change without notice March 98 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-380-2126 Fax http://www.collmer.com |
Price & Availability of 7MBP150RA-060
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